| Issue |
TST
Volume 14, Number 1, March 2021
|
|
|---|---|---|
| Page(s) | 1 - 19 | |
| DOI | https://doi.org/10.1051/tst/2021141001 | |
| Published online | 06 December 2021 | |
Invited Paper
Photo-Excited Silicon-Based Spatial Terahertz Modulators
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
* Email: qywen@uestc.edu.cn
Received:
4
January
2021
The increasing development of terahertz (THz) technology has led to various potential applications in THz imaging, spectroscopy and communications. These devices capable of actively manipulating the amplitude, phase and frequency of THz waves are thus gaining numerous interests. All-optical silicon-based spatial terahertz modulators (STMs), as a simple, cost-effective, and reconfigurable technique, are standing the focus of research. Beginning with a fundamental concept of THz radiation, this paper systematically summarized the modulation mechanism and theoretical model for this kind of STM, reviewed the recent advancements in THz functional devices implemented by this optical method and yet, discussed the performance-improved measures with an emphasis on the reflection reduction. Despite that, there has been considerable progress in realizing high-performance STMs, and novel design is urgent to realize higher modulation rate and more functionality.
Key words: Terahertz / All optical devices / Manipulation / Spatial modulator / Silicon devices
© The Authors 2021. Published by EDP Sciences on behalf of the University of Electronic Science and Technology of China.
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, except for commercial purposes, provided the original work is properly cited.